FF100R12KS4HOSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1200V 150A 780W
$130.70
Available to order
Reference Price (USD)
10+
$82.73100
Exquisite packaging
Discount
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Infineon Technologies's FF100R12KS4HOSA1 IGBT Module offers exceptional reliability for critical applications like aerospace and defense. With features such as avalanche ruggedness and low VCE(sat), it ensures optimal performance. Trust Infineon Technologies for advanced Discrete Semiconductor Products. Ask about customization options!
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: 2 Independent
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 150 A
- Power - Max: 780 W
- Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 100A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 650 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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