FGA60N65SMD
onsemi
onsemi
IGBT FIELD STOP 650V 120A TO3P
$6.53
Available to order
Reference Price (USD)
1+
$5.35000
10+
$4.82300
450+
$3.78593
900+
$3.41433
1,350+
$2.90581
Exquisite packaging
Discount
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The FGA60N65SMD Single IGBT from onsemi redefines reliability in power electronics. Tailored for renewable energy, telecom, and defense applications, it offers ultra-low switching losses and high-frequency operation. With anti-parallel diodes and short-circuit ratings, it s built for safety and performance. onsemi stands behind every FGA60N65SMD with unmatched customer service. Start your order process by contacting our sales team today!
Specifications
- Product Status: Active
- IGBT Type: Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 120 A
- Current - Collector Pulsed (Icm): 180 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
- Power - Max: 600 W
- Switching Energy: 1.54mJ (on), 450µJ (off)
- Input Type: Standard
- Gate Charge: 189 nC
- Td (on/off) @ 25°C: 18ns/104ns
- Test Condition: 400V, 60A, 3Ohm, 15V
- Reverse Recovery Time (trr): 47 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
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