FII24N17AH1S
IXYS
IXYS
IGBT H BRIDGE 1700V 18A I4PAK5
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Reference Price (USD)
25+
$34.99440
Exquisite packaging
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Engineered for excellence, IXYS's FII24N17AH1S IGBT arrays deliver unmatched performance in electric vehicle charging stations and robotic systems. Featuring: reverse conducting capability, soft switching characteristics, and built-in anti-parallel diodes. IXYS combines innovation with decades of semiconductor expertise. Let's discuss how this solution can power your next project contact us now!
Specifications
- Product Status: Active
- IGBT Type: NPT
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): 18 A
- Power - Max: 140 W
- Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 16A
- Current - Collector Cutoff (Max): 100 µA
- Input Capacitance (Cies) @ Vce: 2.4 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: i4-Pac™-5
- Supplier Device Package: ISOPLUS i4-PAC™