FQD3P50TM
onsemi
onsemi
MOSFET P-CH 500V 2.1A DPAK
$1.49
Available to order
Reference Price (USD)
2,500+
$0.56382
5,000+
$0.53718
12,500+
$0.51816
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with FQD3P50TM, a premium Transistors - FETs, MOSFETs - Single from onsemi. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust FQD3P50TM for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.05A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Rohm Semiconductor
BSM180C12P2E202
IXYS
IXFA10N60P
Fairchild Semiconductor
SFU9210TU
Infineon Technologies
IPD50N04S410ATMA1
Nexperia USA Inc.
NX3008NBKVL
Infineon Technologies
IPT007N06NATMA1
Panjit International Inc.
PJA3409_R1_00001
IXYS
IXFT60N60X3HV
Vishay Siliconix
SQJA37EP-T1_GE3
IXYS