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FQPF20N06

Fairchild Semiconductor
FQPF20N06 Preview
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 1
$0.59
Available to order
Reference Price (USD)
1+
$1.37000
10+
$1.21100
100+
$0.95670
500+
$0.74196
1,000+
$0.58575
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 60mOhm @ 7.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack

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