FQT7N10TF
onsemi
onsemi
MOSFET N-CH 100V 1.7A SOT223-4
$0.76
Available to order
Reference Price (USD)
4,000+
$0.21917
8,000+
$0.20574
12,000+
$0.19231
28,000+
$0.18291
Exquisite packaging
Discount
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Experience the power of FQT7N10TF, a premium Transistors - FETs, MOSFETs - Single from onsemi. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, FQT7N10TF is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Last Time Buy
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 350mOhm @ 850mA, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223-4
- Package / Case: TO-261-4, TO-261AA
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