FS450R12OE4PBOSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1200V 900A 20MW
$565.75
Available to order
Reference Price (USD)
4+
$500.77750
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Infineon Technologies's FS450R12OE4PBOSA1 IGBT Module is engineered for high-power applications requiring stability and longevity. Key features include integrated temperature monitoring and low EMI emissions, perfect for medical devices and traction systems. Choose quality contact us for technical specifications and lead times.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Full Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 900 A
- Power - Max: 20 mW
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 450A
- Current - Collector Cutoff (Max): 3 mA
- Input Capacitance (Cies) @ Vce: 1.55 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
Infineon Technologies
FS820R08A6P2LBBPSA1
Fairchild Semiconductor
FP7G50US60
Infineon Technologies
FP15R12KS4CBOSA1
Vishay General Semiconductor - Diodes Division
VS-40MT120PHAPBF
Microchip Technology
APTGL475U120DAG
Infineon Technologies
FP15R12W1T4PBPSA1
Infineon Technologies
FD800R33KF2CNOSA1
Infineon Technologies
FS75R12W2T4BOMA1
Infineon Technologies
FD250R65KE3KNOSA1
Infineon Technologies