G2R1000MT17J
GeneSiC Semiconductor
GeneSiC Semiconductor
SIC MOSFET N-CH 3A TO263-7
$6.82
Available to order
Reference Price (USD)
1+
$6.82000
500+
$6.7518
1000+
$6.6836
1500+
$6.6154
2000+
$6.5472
2500+
$6.479
Exquisite packaging
Discount
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Boost your electronic applications with G2R1000MT17J, a reliable Transistors - FETs, MOSFETs - Single by GeneSiC Semiconductor. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, G2R1000MT17J meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1700 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
- Vgs(th) (Max) @ Id: 4V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): +20V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 139 pF @ 1000 V
- FET Feature: -
- Power Dissipation (Max): 54W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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