GAN063-650WSAQ
Nexperia USA Inc.
Nexperia USA Inc.
GANFET N-CH 650V 34.5A TO247-3
$15.04
Available to order
Reference Price (USD)
1+
$15.04000
500+
$14.8896
1000+
$14.7392
1500+
$14.5888
2000+
$14.4384
2500+
$14.288
Exquisite packaging
Discount
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Upgrade your electronic designs with GAN063-650WSAQ by Nexperia USA Inc., a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, GAN063-650WSAQ ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: GaNFET (Cascode Gallium Nitride FET)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 34.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 143W (Ta)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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