GC20N65T
Goford Semiconductor
Goford Semiconductor
N650V,RD(MAX)<170M@10V,VTH2.5V~4
$2.97
Available to order
Reference Price (USD)
1+
$2.97000
500+
$2.9403
1000+
$2.9106
1500+
$2.8809
2000+
$2.8512
2500+
$2.8215
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with GC20N65T, a high-quality Transistors - FETs, MOSFETs - Single from Goford Semiconductor. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, GC20N65T provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 170mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1724 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 151W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
Related Products
Rectron USA
RM90N30LD
STMicroelectronics
STD11NM50N
Infineon Technologies
IPB80N06S2H5ATMA2
STMicroelectronics
STP11NM60ND
Infineon Technologies
IAUC120N04S6L008ATMA1
Microchip Technology
VN10KN3-G
NXP Semiconductors
PMCM4401VPEZ
Infineon Technologies
IRFS3607TRLPBF
STMicroelectronics
STD16N65M2
Infineon Technologies