HFA3134IH96
Renesas Electronics America Inc
Renesas Electronics America Inc
RF TRANS 2 NPN 9V 8.5GHZ SOT23-6
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Upgrade your RF designs with Renesas Electronics America Inc's HFA3134IH96 Bipolar Junction Transistors (BJT), engineered for precision and efficiency in high-frequency applications. Key features include high gain, fast switching, and thermal stability, suitable for amplifiers, oscillators, and RF modules. Whether for industrial or consumer electronics, these transistors deliver consistent performance. Interested? Submit an inquiry now to learn how HFA3134IH96 can enhance your projects!
Specifications
- Product Status: Obsolete
- Transistor Type: 2 NPN (Dual)
- Voltage - Collector Emitter Breakdown (Max): 9V
- Frequency - Transition: 8.5GHz
- Noise Figure (dB Typ @ f): 2.4dB @ 1GHz
- Gain: -
- Power - Max: -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 48 @ 10mA, 2V
- Current - Collector (Ic) (Max): 26mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: 6-SOT
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