HGTG27N120BN
onsemi
onsemi
IGBT NPT 1200V 72A TO247-3
$6.52
Available to order
Reference Price (USD)
1+
$6.84000
10+
$6.14400
450+
$4.77602
900+
$4.28551
1,350+
$3.61429
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The HGTG27N120BN Single IGBT from onsemi redefines reliability in power electronics. Tailored for renewable energy, telecom, and defense applications, it offers ultra-low switching losses and high-frequency operation. With anti-parallel diodes and short-circuit ratings, it s built for safety and performance. onsemi stands behind every HGTG27N120BN with unmatched customer service. Start your order process by contacting our sales team today!
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 72 A
- Current - Collector Pulsed (Icm): 216 A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 27A
- Power - Max: 500 W
- Switching Energy: 2.2mJ (on), 2.3mJ (off)
- Input Type: Standard
- Gate Charge: 270 nC
- Td (on/off) @ 25°C: 24ns/195ns
- Test Condition: 960V, 27A, 3Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
Related Products
STMicroelectronics
STGP15M65DF2
Microchip Technology
APT50GN60BG
Infineon Technologies
IKW15N120T2FKSA1
Infineon Technologies
IGW30N60H3FKSA1
Rohm Semiconductor
RGS30TSX2GC11
Microchip Technology
APT30GN60BDQ2G
Rohm Semiconductor
RGT50NL65DGTL
STMicroelectronics
STGW15M120DF3
IXYS
IXGH20N120A3
Infineon Technologies