IKD08N65ET6ARMA1
Infineon Technologies
Infineon Technologies
IKD08N65ET6ARMA1
$1.57
Available to order
Reference Price (USD)
1+
$1.57000
500+
$1.5543
1000+
$1.5386
1500+
$1.5229
2000+
$1.5072
2500+
$1.4915
Exquisite packaging
Discount
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The IKD08N65ET6ARMA1 Single IGBT from Infineon Technologies redefines reliability in power electronics. Tailored for renewable energy, telecom, and defense applications, it offers ultra-low switching losses and high-frequency operation. With anti-parallel diodes and short-circuit ratings, it s built for safety and performance. Infineon Technologies stands behind every IKD08N65ET6ARMA1 with unmatched customer service. Start your order process by contacting our sales team today!
Specifications
- Product Status: Not For New Designs
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 15 A
- Current - Collector Pulsed (Icm): 25 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 5A
- Power - Max: 47 W
- Switching Energy: 110µJ (on), 40µJ (off)
- Input Type: Standard
- Gate Charge: 17 nC
- Td (on/off) @ 25°C: 20ns/59ns
- Test Condition: 400V, 5A, 47Ohm, 15V
- Reverse Recovery Time (trr): 43 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PG-TO252-3
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