RGS30TSX2GC11
Rohm Semiconductor

Rohm Semiconductor
10US SHORT-CIRCUIT TOLERANCE, 12
$6.35
Available to order
Reference Price (USD)
1+
$6.35000
500+
$6.2865
1000+
$6.223
1500+
$6.1595
2000+
$6.096
2500+
$6.0325
Exquisite packaging
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The RGS30TSX2GC11 Single IGBT by Rohm Semiconductor sets the standard for power semiconductor excellence. Designed for applications like electric vehicles and industrial machinery, it offers high current density and minimal thermal resistance. Key benefits include easy integration, superior durability, and compliance with international certifications. Partner with Rohm Semiconductor for cutting-edge solutions tailored to your needs. Contact us now to discuss specifications and delivery options!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 30 A
- Current - Collector Pulsed (Icm): 45 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
- Power - Max: 267 W
- Switching Energy: 740µJ (on), 600µJ (off)
- Input Type: Standard
- Gate Charge: 41 nC
- Td (on/off) @ 25°C: 30ns/70ns
- Test Condition: 600V, 15A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N