HGTG30N60B3
Harris Corporation
Harris Corporation
600 V, NPT IGBT
$2.91
Available to order
Reference Price (USD)
1+
$5.83000
10+
$5.23400
450+
$4.06856
900+
$3.65071
1,350+
$3.07892
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The HGTG30N60B3 Single IGBT by Harris Corporation sets the standard for power semiconductor excellence. Designed for applications like electric vehicles and industrial machinery, it offers high current density and minimal thermal resistance. Key benefits include easy integration, superior durability, and compliance with international certifications. Partner with Harris Corporation for cutting-edge solutions tailored to your needs. Contact us now to discuss specifications and delivery options!
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 220 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
- Power - Max: 208 W
- Switching Energy: 500µJ (on), 680µJ (off)
- Input Type: Standard
- Gate Charge: 170 nC
- Td (on/off) @ 25°C: 36ns/137ns
- Test Condition: 480V, 30A, 3Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
Related Products
onsemi
ISL9V5036S3ST
Rohm Semiconductor
RGW50TS65GC11
STMicroelectronics
STGD3HF60HDT4
Infineon Technologies
IRGP4760DPBF
Infineon Technologies
IGD06N60TATMA1
STMicroelectronics
STGWT40H65DFB
Fairchild Semiconductor
FGB20N6S2
Infineon Technologies
IKD04N60RFATMA1
IXYS
IXYH75N65C3H1
onsemi