STGWT40H65DFB
STMicroelectronics
STMicroelectronics
IGBT 650V 80A 283W TO3P-3L
$5.06
Available to order
Reference Price (USD)
1+
$4.26000
30+
$3.61467
120+
$3.13267
510+
$2.66678
1,020+
$2.24910
2,520+
$2.14200
Exquisite packaging
Discount
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Discover high-performance STGWT40H65DFB Single IGBTs from STMicroelectronics, designed for efficient power management in various industrial applications. These transistors offer superior switching capabilities and thermal performance, making them ideal for motor drives, renewable energy systems, and power supplies. Features include low saturation voltage, high current capacity, and robust construction. Whether you're upgrading existing systems or designing new solutions, STGWT40H65DFB ensures reliability and efficiency. Contact us today for pricing and technical support!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 160 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
- Power - Max: 283 W
- Switching Energy: 498µJ (on), 363µJ (off)
- Input Type: Standard
- Gate Charge: 210 nC
- Td (on/off) @ 25°C: 40ns/142ns
- Test Condition: 400V, 40A, 5Ohm, 15V
- Reverse Recovery Time (trr): 62 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
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