HGTP12N60A4D
Fairchild Semiconductor
Fairchild Semiconductor
INSULATED GATE BIPOLAR TRANSISTO
$1.68
Available to order
Reference Price (USD)
1+
$2.94000
10+
$2.63700
100+
$2.11930
800+
$1.74121
1,600+
$1.44272
Exquisite packaging
Discount
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Discover high-performance HGTP12N60A4D Single IGBTs from Fairchild Semiconductor, designed for efficient power management in various industrial applications. These transistors offer superior switching capabilities and thermal performance, making them ideal for motor drives, renewable energy systems, and power supplies. Features include low saturation voltage, high current capacity, and robust construction. Whether you're upgrading existing systems or designing new solutions, HGTP12N60A4D ensures reliability and efficiency. Contact us today for pricing and technical support!
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 54 A
- Current - Collector Pulsed (Icm): 96 A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
- Power - Max: 167 W
- Switching Energy: 55µJ (on), 50µJ (off)
- Input Type: Standard
- Gate Charge: 78 nC
- Td (on/off) @ 25°C: 17ns/96ns
- Test Condition: 390V, 12A, 10Ohm, 15V
- Reverse Recovery Time (trr): 30 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
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