HUF76609D3ST
onsemi
onsemi
MOSFET N-CH 100V 10A TO252AA
$1.01
Available to order
Reference Price (USD)
2,500+
$0.43864
5,000+
$0.41791
12,500+
$0.40311
25,000+
$0.40096
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with HUF76609D3ST by onsemi, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, HUF76609D3ST ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 160mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 49W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Vishay Siliconix
SI2333DS-T1-E3
Infineon Technologies
IGOT60R070D1AUMA1
Diodes Incorporated
DMP2036UVT-7
onsemi
NTLGF3501NT2G
Toshiba Semiconductor and Storage
TK20E60W5,S1VX
Nexperia USA Inc.
PSMN6R7-40MSDX
Vishay Siliconix
SIHW73N60E-GE3
Infineon Technologies
IPA60R060C7XKSA1
Fairchild Semiconductor
HUFA76423D3ST
Infineon Technologies