HUFA75639S3ST-F085A
Fairchild Semiconductor
Fairchild Semiconductor
MOSFET N-CH 100V 56A D2PAK
$1.03
Available to order
Reference Price (USD)
1+
$1.03000
500+
$1.0197
1000+
$1.0094
1500+
$0.9991
2000+
$0.9888
2500+
$0.9785
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose HUFA75639S3ST-F085A by Fairchild Semiconductor. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with HUFA75639S3ST-F085A inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (TO-263)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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