IAUS300N10S5N015TATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 300A HDSOP-16-2
$8.19
Available to order
Reference Price (USD)
1+
$8.19000
500+
$8.1081
1000+
$8.0262
1500+
$7.9443
2000+
$7.8624
2500+
$7.7805
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IAUS300N10S5N015TATMA1 by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IAUS300N10S5N015TATMA1 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 300A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 275µA
- Gate Charge (Qg) (Max) @ Vgs: 216 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 16011 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HDSOP-16-2
- Package / Case: 16-PowerSOP Module
Related Products
Vishay Siliconix
SQJA60EP-T1_BE3
Fairchild Semiconductor
FDD6680AS
onsemi
FDMS86252
Infineon Technologies
BSC019N04NSGATMA1
Micro Commercial Co
MCQ12N10Y-TP
Taiwan Semiconductor Corporation
TSM240N03CX RFG
onsemi
NTLJS2103PTAG
onsemi
FDBL9406L-F085
Vishay Siliconix
SQD40N10-25_GE3
STMicroelectronics