IGD01N120H2BUMA1
Infineon Technologies
Infineon Technologies
IGBT 1200V 3.2A 28W TO252-3
$0.59
Available to order
Reference Price (USD)
2,500+
$0.61872
Exquisite packaging
Discount
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Upgrade your power electronics with IGD01N120H2BUMA1 Single IGBTs by Infineon Technologies, engineered for precision and durability. Perfect for inverters, welding equipment, and automotive applications, these transistors provide fast switching speeds and excellent thermal stability. Key features include high voltage tolerance, low power loss, and compact design. Trust Infineon Technologies for top-quality components that meet global standards. Request a quote now to learn more about how IGD01N120H2BUMA1 can enhance your projects.
Specifications
- Product Status: Last Time Buy
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 3.2 A
- Current - Collector Pulsed (Icm): 3.5 A
- Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 1A
- Power - Max: 28 W
- Switching Energy: 140µJ
- Input Type: Standard
- Gate Charge: 8.6 nC
- Td (on/off) @ 25°C: 13ns/370ns
- Test Condition: 800V, 1A, 241Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PG-TO252-3-11
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