IKB20N65EH5ATMA1
Infineon Technologies
Infineon Technologies
INDUSTRY 14
$2.27
Available to order
Reference Price (USD)
1,000+
$1.66169
Exquisite packaging
Discount
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Discover high-performance IKB20N65EH5ATMA1 Single IGBTs from Infineon Technologies, designed for efficient power management in various industrial applications. These transistors offer superior switching capabilities and thermal performance, making them ideal for motor drives, renewable energy systems, and power supplies. Features include low saturation voltage, high current capacity, and robust construction. Whether you're upgrading existing systems or designing new solutions, IKB20N65EH5ATMA1 ensures reliability and efficiency. Contact us today for pricing and technical support!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 38 A
- Current - Collector Pulsed (Icm): 60 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
- Power - Max: 125 W
- Switching Energy: 560µJ (on), 130µJ (off)
- Input Type: Standard
- Gate Charge: 48 nC
- Td (on/off) @ 25°C: 19ns/160ns
- Test Condition: 400V, 20A, 32Ohm, 15V
- Reverse Recovery Time (trr): 80 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-3
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