IKFW75N65EH5XKSA1
Infineon Technologies
Infineon Technologies
IKFW75N65EH5XKSA1
$8.24
Available to order
Reference Price (USD)
1+
$8.24000
500+
$8.1576
1000+
$8.0752
1500+
$7.9928
2000+
$7.9104
2500+
$7.828
Exquisite packaging
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The IKFW75N65EH5XKSA1 Single IGBT from Infineon Technologies redefines reliability in power electronics. Tailored for renewable energy, telecom, and defense applications, it offers ultra-low switching losses and high-frequency operation. With anti-parallel diodes and short-circuit ratings, it s built for safety and performance. Infineon Technologies stands behind every IKFW75N65EH5XKSA1 with unmatched customer service. Start your order process by contacting our sales team today!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 240 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 60A
- Power - Max: 148 W
- Switching Energy: 1.8mJ (on), 600µJ (off)
- Input Type: Standard
- Gate Charge: 144 nC
- Td (on/off) @ 25°C: 30ns/206ns
- Test Condition: 400V, 60A, 12Ohm, 15V
- Reverse Recovery Time (trr): 75 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-HSIP247-3-2
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