IMBG120R350M1HXTMA1
Infineon Technologies
Infineon Technologies
SICFET N-CH 1.2KV 4.7A TO263
$9.71
Available to order
Reference Price (USD)
1+
$9.71000
500+
$9.6129
1000+
$9.5158
1500+
$9.4187
2000+
$9.3216
2500+
$9.2245
Exquisite packaging
Discount
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Experience the power of IMBG120R350M1HXTMA1, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, IMBG120R350M1HXTMA1 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 468mOhm @ 2A, 18V
- Vgs(th) (Max) @ Id: 5.7V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 18 V
- Vgs (Max): +18V, -15V
- Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 800 V
- FET Feature: Standard
- Power Dissipation (Max): 65W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7-12
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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