IPB47N10SL26ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 47A TO263-3
$0.97
Available to order
Reference Price (USD)
1,000+
$1.04281
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IPB47N10SL26ATMA1 by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IPB47N10SL26ATMA1 inquire now for more details!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 26mOhm @ 33A, 10V
- Vgs(th) (Max) @ Id: 2V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 175W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Toshiba Semiconductor and Storage
TK6R9P08QM,RQ
Vishay Siliconix
SIHA24N80AE-GE3
Infineon Technologies
IPAN70R450P7SXKSA1
STMicroelectronics
STB10N60M2
Fairchild Semiconductor
HUF76132S3S
onsemi
NTGD4169FT1G
Infineon Technologies
IPD060N03LGBTMA1
onsemi
NTB8N50
Infineon Technologies
IPD530N15N3GATMA1
Fairchild Semiconductor