IPD048N06L3GATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 60V 90A TO252-3
$0.78
Available to order
Reference Price (USD)
1+
$0.77880
500+
$0.771012
1000+
$0.763224
1500+
$0.755436
2000+
$0.747648
2500+
$0.73986
Exquisite packaging
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Enhance your circuit performance with IPD048N06L3GATMA1, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust IPD048N06L3GATMA1 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 4.8mOhm @ 90A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 58µA
- Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 115W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3-311
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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