IPDD60R170CFD7XTMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 19A HDSOP-10
$4.48
Available to order
Reference Price (USD)
1+
$4.48000
500+
$4.4352
1000+
$4.3904
1500+
$4.3456
2000+
$4.3008
2500+
$4.256
Exquisite packaging
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Discover IPDD60R170CFD7XTMA1, a versatile Transistors - FETs, MOSFETs - Single solution from Infineon Technologies, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 170mOhm @ 4.9A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 240µA
- Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1016 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 137W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HDSOP-10-1
- Package / Case: 10-PowerSOP Module
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