IPP200N25N3GXKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 250V 64A TO220-3
$9.81
Available to order
Reference Price (USD)
1+
$7.47000
10+
$6.72100
100+
$5.52600
500+
$4.62992
1,000+
$4.03252
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with IPP200N25N3GXKSA1, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust IPP200N25N3GXKSA1 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250 V
- Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 20mOhm @ 64A, 10V
- Vgs(th) (Max) @ Id: 4V @ 270µA
- Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7100 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
Related Products
Infineon Technologies
ISP20EP10LMXTSA1
onsemi
NTTFS008P03P8Z
Fairchild Semiconductor
SSI7N60BTU
Harris Corporation
HUF75309D3S
Nexperia USA Inc.
PHD101NQ03LT,118
Renesas Electronics America Inc
RJK6013DPP-00#T2
Vishay Siliconix
SIHG24N65E-GE3
NXP USA Inc.
BSH112,235
Nexperia USA Inc.
NXV100XPR
IXYS