SIHG24N65E-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 650V 24A TO247AC
$4.02
Available to order
Reference Price (USD)
1+
$7.00000
10+
$6.27000
100+
$5.18100
500+
$4.23720
1,000+
$3.60800
2,500+
$3.43860
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover SIHG24N65E-GE3, a versatile Transistors - FETs, MOSFETs - Single solution from Vishay Siliconix, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AC
- Package / Case: TO-247-3
Related Products
NXP USA Inc.
BSH112,235
Nexperia USA Inc.
NXV100XPR
IXYS
IXFN80N50
IXYS
IXTA62N15P
Diodes Incorporated
DMN6140LQ-13
onsemi
FDN308P
Microchip Technology
APT13F120B
Vishay Siliconix
IRFP350PBF
Infineon Technologies
IPD50P03P4L11ATMA2
Diodes Incorporated