IPP65R420CFDXKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 8.7A TO220-3
$1.06
Available to order
Reference Price (USD)
500+
$1.20082
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover IPP65R420CFDXKSA1, a versatile Transistors - FETs, MOSFETs - Single solution from Infineon Technologies, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 340µA
- Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 83.3W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
Related Products
Renesas Electronics America Inc
RJK1562DJE-00#Z0
Diodes Incorporated
DMP1045UQ-7
Infineon Technologies
IPA60R125C6XKSA1
Microchip Technology
APT9M100B
Panjit International Inc.
PJE8438_R1_00001
Nexperia USA Inc.
PSMN1R5-30BLEJ
STMicroelectronics
STB11NM60T4
Infineon Technologies
IPD65R420CFDATMA1
Infineon Technologies
IAUC60N04S6N044ATMA1
Vishay Siliconix