IPS60R600PFD7SAKMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 6A TO251-3
$1.25
Available to order
Reference Price (USD)
1+
$1.25000
500+
$1.2375
1000+
$1.225
1500+
$1.2125
2000+
$1.2
2500+
$1.1875
Exquisite packaging
Discount
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Optimize your electronic systems with IPS60R600PFD7SAKMA1, a high-quality Transistors - FETs, MOSFETs - Single from Infineon Technologies. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, IPS60R600PFD7SAKMA1 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 80µA
- Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 31W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO251-3
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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