SIRA01DP-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 30V 26A/60A PPAK SO8
$1.32
Available to order
Reference Price (USD)
3,000+
$0.59778
6,000+
$0.56971
15,000+
$0.54967
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with SIRA01DP-T1-GE3 by Vishay Siliconix, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, SIRA01DP-T1-GE3 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 4.9mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
- Vgs (Max): +16V, -20V
- Input Capacitance (Ciss) (Max) @ Vds: 3490 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
Related Products
Nexperia USA Inc.
BST82,215
Vishay Siliconix
SI2314EDS-T1-E3
Fairchild Semiconductor
FDS7060N7
Infineon Technologies
IPP80R1K2P7
onsemi
FDMS86103L
STMicroelectronics
STS6P3LLH6
Renesas Electronics America Inc
NP36P04SDG-E1-AY
Toshiba Semiconductor and Storage
TK100L60W,VQ
STMicroelectronics
STP2N62K3
Infineon Technologies