IPSA70R750P7SAKMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 700V 6.5A TO251-3
$1.07
Available to order
Reference Price (USD)
1+
$0.83000
10+
$0.72500
100+
$0.55930
500+
$0.41426
1,000+
$0.33141
Exquisite packaging
Discount
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Enhance your circuit performance with IPSA70R750P7SAKMA1, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust IPSA70R750P7SAKMA1 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 700 V
- Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 750mOhm @ 1.4A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 70µA
- Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 400 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 306 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 34.7W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO251-3
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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