TK100E06N1,S1X
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N CH 60V 100A TO-220
$2.62
Available to order
Reference Price (USD)
1+
$2.50000
50+
$2.01500
100+
$1.81350
500+
$1.41050
1,000+
$1.16870
2,500+
$1.12840
Exquisite packaging
Discount
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TK100E06N1,S1X by Toshiba Semiconductor and Storage is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, TK100E06N1,S1X ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 255W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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