IPW60R199CPFKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 16A TO247-3
$4.42
Available to order
Reference Price (USD)
240+
$3.89954
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IPW60R199CPFKSA1 by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IPW60R199CPFKSA1 inquire now for more details!
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 199mOhm @ 9.9A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 660µA
- Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 139W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3-1
- Package / Case: TO-247-3
Related Products
Microchip Technology
MSC025SMA120J
NXP USA Inc.
PMN45EN,135
Rohm Semiconductor
SCT2280KEC
onsemi
FDN028N20
Rohm Semiconductor
R6020JNJGTL
Vishay Siliconix
SQJ460AEP-T1_BE3
STMicroelectronics
STP80NF10FP
Infineon Technologies
IRFR4104TRLPBF
Infineon Technologies
IRF7853TRPBF
Diodes Incorporated