IPW65R041CFD7XKSA1
Infineon Technologies
Infineon Technologies
650V FET COOLMOS TO247
$14.13
Available to order
Reference Price (USD)
1+
$14.13000
500+
$13.9887
1000+
$13.8474
1500+
$13.7061
2000+
$13.5648
2500+
$13.4235
Exquisite packaging
Discount
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Infineon Technologies presents IPW65R041CFD7XKSA1, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, IPW65R041CFD7XKSA1 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 41mOhm @ 24.8A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
- Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 227W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
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