IPW65R048CFDAFKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 63.3A TO247-3
$21.49
Available to order
Reference Price (USD)
1+
$18.79000
10+
$17.20500
240+
$14.82913
720+
$12.84950
Exquisite packaging
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Boost your electronic applications with IPW65R048CFDAFKSA1, a reliable Transistors - FETs, MOSFETs - Single by Infineon Technologies. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IPW65R048CFDAFKSA1 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 63.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 48mOhm @ 29.4A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 2.9mA
- Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7440 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 500W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
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