IPW65R115CFD7AXKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 21A TO247-3-41
$7.61
Available to order
Reference Price (USD)
1+
$7.61000
500+
$7.5339
1000+
$7.4578
1500+
$7.3817
2000+
$7.3056
2500+
$7.2295
Exquisite packaging
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Infineon Technologies presents IPW65R115CFD7AXKSA1, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, IPW65R115CFD7AXKSA1 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 115mOhm @ 9.7A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 490µA
- Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 114W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3-41
- Package / Case: TO-247-3
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