IPW80R290C3AXKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 800V 17A TO247-3
$7.60
Available to order
Reference Price (USD)
240+
$5.95321
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
IPW80R290C3AXKSA1 by Infineon Technologies is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, IPW80R290C3AXKSA1 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 227W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
Related Products
STMicroelectronics
SCTH35N65G2V-7AG
Infineon Technologies
IPP60R520C6XKSA1
Panjit International Inc.
PJP7NA65_T0_00001
Sanyo
2SB817D
Infineon Technologies
BSS816NWH6327XTSA1
Diodes Incorporated
DMPH2040UVTQ-13
onsemi
FDN5630
STMicroelectronics
STO33N60M6
Infineon Technologies
IRF2807ZPBF
Fairchild Semiconductor