IQE030N06NM5ATMA1
Infineon Technologies
Infineon Technologies
TRENCH 40<-<100V PG-TSON-8
$3.38
Available to order
Reference Price (USD)
1+
$3.38000
500+
$3.3462
1000+
$3.3124
1500+
$3.2786
2000+
$3.2448
2500+
$3.211
Exquisite packaging
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Upgrade your electronic designs with IQE030N06NM5ATMA1 by Infineon Technologies, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, IQE030N06NM5ATMA1 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 137A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 3.3V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSON-8-4
- Package / Case: 8-PowerTDFN
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