IRF610PBF
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 200V 3.3A TO220AB
$0.98
Available to order
Reference Price (USD)
1+
$0.84000
50+
$0.65520
100+
$0.57320
500+
$0.42942
1,000+
$0.34726
2,500+
$0.31646
5,000+
$0.29592
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with IRF610PBF, a reliable Transistors - FETs, MOSFETs - Single by Vishay Siliconix. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IRF610PBF meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 36W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
Related Products
Diodes Incorporated
DMP1011UCB9-7
Micro Commercial Co
BSS84KW-TP
Nexperia USA Inc.
PSMN8R5-40MLDX
IXYS
IXFN110N60P3
onsemi
NTMFS4C10NT1G-001
IXYS
IXTX5N250
Vishay Siliconix
SI1411DH-T1-GE3
IXYS
IXFA24N60X
Toshiba Semiconductor and Storage
SSM6K513NU,LF
Nexperia USA Inc.