IRFBC20SPBF
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 600V 2.2A D2PAK
$3.05
Available to order
Reference Price (USD)
1+
$3.20000
10+
$2.89200
100+
$2.32400
500+
$1.80758
1,000+
$1.49771
3,000+
$1.39442
5,000+
$1.34277
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of IRFBC20SPBF, a premium Transistors - FETs, MOSFETs - Single from Vishay Siliconix. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, IRFBC20SPBF is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.3A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK (TO-263)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Fairchild Semiconductor
FDZ208P
Yangzhou Yangjie Electronic Technology Co.,Ltd
YJL02N10A-F2-0000HF
Fairchild Semiconductor
FQH90N10V2
Nexperia USA Inc.
PMV100XPEAR
onsemi
NTD78N03R-1G
EPC
EPC2034
Texas Instruments
CSD19533Q5AT
onsemi
NTD4302G
Infineon Technologies
IPD60R460CEAUMA1
Fairchild Semiconductor