ISC022N10NM6ATMA1
Infineon Technologies
Infineon Technologies
TRENCH >=100V PG-TSON-8
$5.50
Available to order
Reference Price (USD)
1+
$5.50000
500+
$5.445
1000+
$5.39
1500+
$5.335
2000+
$5.28
2500+
$5.225
Exquisite packaging
Discount
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Discover ISC022N10NM6ATMA1, a versatile Transistors - FETs, MOSFETs - Single solution from Infineon Technologies, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 230A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
- Rds On (Max) @ Id, Vgs: 2.24mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 3.3V @ 147µA
- Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6880 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 254W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSON-8-3
- Package / Case: 8-PowerTDFN
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