IV1Q12050T3
Inventchip
Inventchip
SIC MOSFET, 1200V 50MOHM, TO-247
$39.28
Available to order
Reference Price (USD)
1+
$39.28000
500+
$38.8872
1000+
$38.4944
1500+
$38.1016
2000+
$37.7088
2500+
$37.316
Exquisite packaging
Discount
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Discover high-performance IV1Q12050T3 from Inventchip, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, IV1Q12050T3 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 65mOhm @ 20A, 20V
- Vgs(th) (Max) @ Id: 3.2V @ 6mA
- Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 20 V
- Vgs (Max): +20V, -5V
- Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 327W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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