IXDN75N120
IXYS
IXYS
IGBT MOD 1200V 150A 660W SOT227B
$35.89
Available to order
Reference Price (USD)
1+
$35.98000
10+
$33.28200
30+
$30.58300
100+
$28.42420
250+
$26.08552
Exquisite packaging
Discount
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IXYS's IXDN75N120 IGBT Module is engineered for high-power applications requiring stability and longevity. Key features include integrated temperature monitoring and low EMI emissions, perfect for medical devices and traction systems. Choose quality contact us for technical specifications and lead times.
Specifications
- Product Status: Active
- IGBT Type: NPT
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 150 A
- Power - Max: 660 W
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 75A
- Current - Collector Cutoff (Max): 4 mA
- Input Capacitance (Cies) @ Vce: 5.5 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
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