IXFH34N65X3
IXYS
IXYS
MOSFET 34A 650V X3 TO247
$7.43
Available to order
Reference Price (USD)
1+
$7.43000
500+
$7.3557
1000+
$7.2814
1500+
$7.2071
2000+
$7.1328
2500+
$7.0585
Exquisite packaging
Discount
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Discover high-performance IXFH34N65X3 from IXYS, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, IXFH34N65X3 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id: 5.2V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2025 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 446W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXFH)
- Package / Case: TO-247-3
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