IXFQ90N20X3
IXYS
IXYS
MOSFET N-CH 200V 90A TO3P
$9.26
Available to order
Reference Price (USD)
1+
$7.38000
30+
$6.04767
120+
$5.45750
510+
$4.57251
1,020+
$4.13000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover IXFQ90N20X3, a versatile Transistors - FETs, MOSFETs - Single solution from IXYS, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 12.8mOhm @ 45A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
- Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5420 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 390W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-3P-3, SC-65-3
Related Products
Rohm Semiconductor
SCT3040KLHRC11
onsemi
FCA16N60N
STMicroelectronics
STL120N4F6AG
Infineon Technologies
AUIRFP4110
Infineon Technologies
IPU60R3K4CEAKMA1
Linear Integrated Systems, Inc.
SST215 SOT-143 4L
Vishay Siliconix
SIHB12N60ET1-GE3
Panjit International Inc.
PJS6401_S1_00001
STMicroelectronics
STW33N60M6
Infineon Technologies