IXFT69N30P
IXYS
IXYS
MOSFET N-CH 300V 69A TO268
$11.13
Available to order
Reference Price (USD)
30+
$8.05667
Exquisite packaging
Discount
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Discover high-performance IXFT69N30P from IXYS, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, IXFT69N30P delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300 V
- Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 49mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4960 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 500W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-268AA
- Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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