IXTA6N100D2HV
IXYS
IXYS
MOSFET N-CH 1000V 6A TO263HV
$11.21
Available to order
Reference Price (USD)
1+
$11.21340
500+
$11.101266
1000+
$10.989132
1500+
$10.876998
2000+
$10.764864
2500+
$10.65273
Exquisite packaging
Discount
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IXTA6N100D2HV by IXYS is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, IXTA6N100D2HV ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 0V
- Rds On (Max) @ Id, Vgs: 2.2Ohm @ 3A, 0V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 10 V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 300W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263HV
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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