IXTH13N80
IXYS
IXYS
MOSFET N-CH 800V 13A TO247
$12.25
Available to order
Reference Price (USD)
30+
$9.57367
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover IXTH13N80, a versatile Transistors - FETs, MOSFETs - Single solution from IXYS, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 800mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
Related Products
STMicroelectronics
STP24NF10
Infineon Technologies
IPW60R037P7XKSA1
Infineon Technologies
BTS282ZE3230AKSA2
Microchip Technology
APT8043BFLLG
STMicroelectronics
STI30N65M5
onsemi
5HN01S-TL-E
NXP USA Inc.
PMV60EN,215
Fairchild Semiconductor
HUFA76629D3S
Fairchild Semiconductor
FQI9N50CTU
Renesas Electronics America Inc